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Tag: SweGaNs

Chalmers demos GaN power devices with> 1600V breakdown and 22nA/mm leakage current on SweGaN’s QuanFINE epi

Posted on June 26, 2022 by global forex

News: Microelectronics 24 June 2022 New state-of-the-art results have been reported for high-voltage GaN power devices enabled by the MIS-HEMT technology of Chalmers University of Technology in Gothenburg, Sweden and the QuanFINE…

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